BSS209PW
MOSFET P-CH 20V 580MA SOT323-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ BSS209PW is a P-Channel MOSFET designed for power management applications. This device features a 20V Drain-Source voltage (Vdss) and a continuous drain current (Id) of 580mA at 25°C. The BSS209PW exhibits a maximum On-Resistance (Rds On) of 550mOhm at 580mA and 4.5V gate-source voltage. It is packaged in a PG-SOT323 surface mount configuration and operates across a temperature range of -55°C to 150°C. Key electrical characteristics include a gate charge (Qg) of 1.38 nC at 4.5V and an input capacitance (Ciss) of 89.9 pF at 15V. The power dissipation is rated at 520mW. This component is suitable for use in automotive and industrial control systems.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 580mA (Ta) |
| Rds On (Max) @ Id, Vgs | 550mOhm @ 580mA, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 520mW (Ta) |
| Vgs(th) (Max) @ Id | 1.2V @ 3.5µA |
| Supplier Device Package | PG-SOT323 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 1.38 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 89.9 pF @ 15 V |
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