BSS205NL6327HTSA1
MOSFET N-CH 20V 2.5A SOT23-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies BSS205NL6327HTSA1 is an N-Channel Power MOSFET from the OptiMOS™ series. This component features a Drain-Source Voltage (Vds) of 20V and a continuous drain current (Id) capability of 2.5A at 25°C. The On-Resistance (Rds On) is specified at a maximum of 50mOhm at 2.5A and 4.5V gate-source voltage. Key electrical characteristics include a typical gate charge (Qg) of 3.2 nC at 4.5V and input capacitance (Ciss) of 419 pF maximum at 10V. Designed for surface mounting, it is supplied in the PG-SOT23 package. The maximum power dissipation (Pd) is 500mW, and it operates across a temperature range of -55°C to 150°C. This MOSFET is suitable for applications in consumer electronics and industrial automation.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 2.5A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 500mW (Ta) |
| Vgs(th) (Max) @ Id | 1.2V @ 11µA |
| Supplier Device Package | PG-SOT23 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 3.2 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 419 pF @ 10 V |
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