BSS192PE6327
MOSFET P-CH 250V 190MA SOT89Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' SIPMOS® BSS192PE6327 is a P-Channel enhancement mode MOSFET designed for demanding applications. This device features a Drain-Source Voltage (Vdss) of 250V and a continuous Drain Current (Id) of 190mA at 25°C. The low on-resistance of 12 Ohm maximum at 190mA and 10V Vgs, coupled with a gate charge of 6.1 nC at 10V, ensures efficient switching performance. With a maximum power dissipation of 1W and operating temperature range of -55°C to 150°C, it is suitable for use in industrial and automotive systems. The component is supplied in a PG-SOT89 package for surface mounting and is available on tape and reel. Key parameters include an input capacitance (Ciss) of 104 pF at 25V and a threshold voltage (Vgs(th)) of 2V at 130µA.
Additional Information
Series: SIPMOS®RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 190mA (Ta) |
| Rds On (Max) @ Id, Vgs | 12Ohm @ 190mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 130µA |
| Supplier Device Package | PG-SOT89 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.8V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.1 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 104 pF @ 25 V |
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