BSS169L6906HTSA1
MOSFET N-CH 100V 170MA SOT23-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SIPMOS® N-Channel MOSFET, part number BSS169L6906HTSA1, is a depletion mode device designed for surface mount applications. This component features a Drain-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 170mA at 25°C. The Rds On is specified at a maximum of 6 Ohms when Id is 170mA and Vgs is 10V. Key parameters include a Gate Charge (Qg) of 2.8 nC maximum at 7V and an Input Capacitance (Ciss) of 68 pF maximum at 25V. The device is packaged in a PG-SOT23 (TO-236-3, SC-59) and supplied on Tape & Reel (TR). Its power dissipation (Pd) is 360mW at 25°C. Operating temperature range is -55°C to 150°C. This MOSFET is utilized across various industries including automotive, industrial, and consumer electronics for switching and amplification applications.
Additional Information
Series: SIPMOS®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 170mA (Ta) |
| Rds On (Max) @ Id, Vgs | 6Ohm @ 170mA, 10V |
| FET Feature | Depletion Mode |
| Power Dissipation (Max) | 360mW (Ta) |
| Vgs(th) (Max) @ Id | 1.8V @ 50µA |
| Supplier Device Package | PG-SOT23 |
| Drive Voltage (Max Rds On, Min Rds On) | 0V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 2.8 nC @ 7 V |
| Input Capacitance (Ciss) (Max) @ Vds | 68 pF @ 25 V |
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