BSS169H6906XTSA1
MOSFET N-CH 100V 170MA SOT23-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' SIPMOS™ BSS169H6906XTSA1 is an N-channel, depletion mode MOSFET designed for surface mounting. This component offers a Drain-to-Source Voltage (Vdss) of 100V and a continuous drain current (Id) of 170mA at 25°C. Key electrical characteristics include a maximum Rds On of 6 Ohm at 170mA and 10V, with a gate charge (Qg) of 2.8 nC at 7V. The device features low input capacitance (Ciss) of 68 pF at 10V and a maximum power dissipation of 360mW. Operating across a temperature range of -55°C to 150°C, the BSS169H6906XTSA1 is housed in a PG-SOT23 package and is AEC-Q101 qualified, making it suitable for automotive applications.
Additional Information
Series: SIPMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 170mA (Ta) |
| Rds On (Max) @ Id, Vgs | 6Ohm @ 170mA, 10V |
| FET Feature | Depletion Mode |
| Power Dissipation (Max) | 360mW (Ta) |
| Vgs(th) (Max) @ Id | 1.8V @ 50µA |
| Supplier Device Package | PG-SOT23 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 0V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 2.8 nC @ 7 V |
| Input Capacitance (Ciss) (Max) @ Vds | 68 pF @ 10 V |
| Qualification | AEC-Q101 |
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