BSS169 E6906
MOSFET N-CH 100V 170MA SOT23-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SIPMOS® N-Channel MOSFET, part number BSS169-E6906, is designed for efficient switching applications. This device features a Drain-Source Voltage (Vdss) of 100 V and a continuous Drain Current (Id) of 170 mA at 25°C. The Rds On is specified as a maximum of 6 Ohms at 170 mA and 10 V gate drive. With a Vgs(th) of 1.8 V (max) at 50µA, it operates with low gate drive requirements. Key parameters include a Gate Charge (Qg) of 2.8 nC (max) at 7 V and an Input Capacitance (Ciss) of 68 pF (max) at 25 V. The component offers a maximum power dissipation of 360 mW (Ta) and is housed in a PG-SOT23 package, suitable for surface mounting. Operating temperatures range from -55°C to 150°C (TJ). This MOSFET is commonly found in automotive, industrial, and consumer electronics sectors requiring efficient power management.
Additional Information
Series: SIPMOS®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 170mA (Ta) |
| Rds On (Max) @ Id, Vgs | 6Ohm @ 170mA, 10V |
| FET Feature | Depletion Mode |
| Power Dissipation (Max) | 360mW (Ta) |
| Vgs(th) (Max) @ Id | 1.8V @ 50µA |
| Supplier Device Package | PG-SOT23 |
| Drive Voltage (Max Rds On, Min Rds On) | 0V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 2.8 nC @ 7 V |
| Input Capacitance (Ciss) (Max) @ Vds | 68 pF @ 25 V |
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