BSS169 E6327
MOSFET N-CH 100V 170MA SOT23-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies BSS169-E6327 is a SIPMOS® N-Channel MOSFET designed for surface mount applications. This component features a Drain-to-Source Voltage (Vdss) of 100 V and a continuous drain current (Id) of 170 mA at 25°C. The device exhibits a maximum Rds On of 6 Ohms at an Id of 170 mA and a Vgs of 10 V, with a typical gate charge (Qg) of 2.8 nC at 7 V. The input capacitance (Ciss) is a maximum of 68 pF at 25 V. Operating within a temperature range of -55°C to 150°C, this MOSFET is housed in a PG-SOT23 package. Its depletion mode operation and 360mW power dissipation make it suitable for various general-purpose switching applications across industries such as industrial automation and consumer electronics.
Additional Information
Series: SIPMOS®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 170mA (Ta) |
| Rds On (Max) @ Id, Vgs | 6Ohm @ 170mA, 10V |
| FET Feature | Depletion Mode |
| Power Dissipation (Max) | 360mW (Ta) |
| Vgs(th) (Max) @ Id | 1.8V @ 50µA |
| Supplier Device Package | PG-SOT23 |
| Drive Voltage (Max Rds On, Min Rds On) | 0V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 2.8 nC @ 7 V |
| Input Capacitance (Ciss) (Max) @ Vds | 68 pF @ 25 V |
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