BSS159NH6906XTSA1
MOSFET N-CH 60V 230MA SOT23-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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The Infineon Technologies SIPMOS® BSS159NH6906XTSA1 is an N-channel, depletion mode MOSFET designed for automotive applications. This component features a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 230mA at 25°C. The device offers a maximum Rds On of 3.5 Ohms at 160mA and 10V gate-source voltage. With a gate charge (Qg) of 2.9 nC at 5V, it is suitable for various switching applications. The power dissipation (Pd) is rated at 360mW (Ta). This AEC-Q101 qualified component is housed in a PG-SOT23 package and is supplied on tape and reel. It operates across a temperature range of -55°C to 150°C.
Additional Information
Series: SIPMOS®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 230mA (Ta) |
| Rds On (Max) @ Id, Vgs | 3.5Ohm @ 160mA, 10V |
| FET Feature | Depletion Mode |
| Power Dissipation (Max) | 360mW (Ta) |
| Vgs(th) (Max) @ Id | 2.4V @ 26µA |
| Supplier Device Package | PG-SOT23 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 0V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 2.9 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 44 pF @ 25 V |
| Qualification | AEC-Q101 |
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