BSS139L6327HTSA1
MOSFET N-CH 250V 100MA SOT23-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies BSS139L6327HTSA1 is a N-Channel SIPMOS® MOSFET designed for surface mount applications. This component features a Drain-to-Source Voltage (Vdss) of 250V and a continuous drain current (Id) of 100mA at 25°C. The depletion mode MOSFET has a maximum Rds On of 14 Ohms at 0.1mA and 10V. Key characteristics include a gate charge (Qg) of 3.5 nC (max) at 5V and an input capacitance (Ciss) of 76 pF (max) at 25V. The device is packaged in a PG-SOT23 (TO-236-3, SC-59) and supplied on tape and reel. With a maximum power dissipation of 360mW (Ta) and an operating temperature range of -55°C to 150°C, this MOSFET is suitable for use in power supply, automotive, and industrial control applications.
Additional Information
Series: SIPMOS®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100mA (Ta) |
| Rds On (Max) @ Id, Vgs | 14Ohm @ 0.1mA, 10V |
| FET Feature | Depletion Mode |
| Power Dissipation (Max) | 360mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 56µA |
| Supplier Device Package | PG-SOT23 |
| Drive Voltage (Max Rds On, Min Rds On) | 0V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 3.5 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 76 pF @ 25 V |
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