BSS139IXTMA1
MOSFET N-CH 250V 100MA SOT23-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies BSS139IXTMA1 is an N-channel depletion mode MOSFET designed for efficient switching applications. This component offers a Drain-Source Voltage (Vdss) of 250V and a continuous drain current (Id) of 100mA at 25°C (Ta), with a maximum power dissipation of 360mW (Ta). The device features a low on-resistance (Rds On) of 14 Ohms maximum at 100mA and 10V, and a gate charge (Qg) of 2.3 nC maximum at 5V. Input capacitance (Ciss) is specified at 60pF maximum at 25V. The BSS139IXTMA1 is housed in a PG-SOT23-3-5 surface mount package, suitable for automated assembly. Key parameters include a gate-source threshold voltage (Vgs(th)) of 1V maximum at 56µA and a maximum gate-source voltage (Vgs) of ±20V. It operates across a temperature range of -55°C to 150°C. This device finds application in various industrial sectors requiring precise control of power flow.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100mA (Ta) |
| Rds On (Max) @ Id, Vgs | 14Ohm @ 100mA, 10V |
| FET Feature | Depletion Mode |
| Power Dissipation (Max) | 360mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 56µA |
| Supplier Device Package | PG-SOT23-3-5 |
| Drive Voltage (Max Rds On, Min Rds On) | 0V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 2.3 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 60 pF @ 25 V |
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