BSS139 E6327
MOSFET N-CH 250V 100MA SOT23-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies BSS139-E6327 is an N-channel SIPMOS® MOSFET designed for surface mount applications. This device features a Drain-Source Voltage (Vdss) of 250 V and a continuous drain current (Id) of 100 mA at 25°C (Ta), with a maximum power dissipation of 360 mW (Ta). The BSS139-E6327 is characterized by its depletion mode operation and a low Rds On of 14 Ohms maximum at 0.1 mA and 10 V. Key parameters include a gate charge (Qg) of 3.5 nC max at 5 V and an input capacitance (Ciss) of 76 pF max at 25 V. The MOSFET is housed in a PG-SOT23 package and operates across a temperature range of -55°C to 150°C. This component is suitable for various industrial applications requiring efficient switching and voltage regulation.
Additional Information
Series: SIPMOS®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100mA (Ta) |
| Rds On (Max) @ Id, Vgs | 14Ohm @ 0.1mA, 10V |
| FET Feature | Depletion Mode |
| Power Dissipation (Max) | 360mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 56µA |
| Supplier Device Package | PG-SOT23 |
| Drive Voltage (Max Rds On, Min Rds On) | 0V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 3.5 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 76 pF @ 25 V |
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