BSS138W L6327
MOSFET N-CH 60V 280MA SOT323-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SIPMOS® BSS138W-L6327 is an N-Channel MOSFET designed for efficient switching applications. This component features a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 280mA at 25°C ambient temperature. The device offers a low on-resistance (Rds On) of 3.5 Ohms maximum at 220mA and 10V Vgs. Key parameters include gate charge (Qg) of 1.5 nC maximum at 10V Vgs and input capacitance (Ciss) of 43 pF maximum at 25V Vds. The power dissipation (Pd) is rated at 500mW ambient. The BSS138W-L6327 is housed in a PG-SOT323 (SC-70) surface-mount package and operates within a temperature range of -55°C to 150°C. This MOSFET is typically utilized in industrial automation, consumer electronics, and automotive systems. It is supplied on Tape & Reel.
Additional Information
Series: SIPMOS®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 280mA (Ta) |
| Rds On (Max) @ Id, Vgs | 3.5Ohm @ 220mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 500mW (Ta) |
| Vgs(th) (Max) @ Id | 1.4V @ 26µA |
| Supplier Device Package | PG-SOT323 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 1.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 43 pF @ 25 V |
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