BSS138W E6433
MOSFET N-CH 60V 280MA SOT323-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies BSS138W-E6433 is a SIPMOS® series N-Channel MOSFET designed for general-purpose switching applications. This component features a 60V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 280mA at 25°C. The Rds(on) is specified at a maximum of 3.5 Ohms at 220mA and 10V gate-source voltage. Its low gate charge of 1.5 nC at 10V and input capacitance of 43 pF at 25V contribute to efficient switching characteristics. The device operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 500mW. Packaged in a PG-SOT323 (SC-70) surface-mount package, the BSS138W-E6433 is supplied on tape and reel. This MOSFET is commonly found in industrial automation, consumer electronics, and power management solutions.
Additional Information
Series: SIPMOS®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 280mA (Ta) |
| Rds On (Max) @ Id, Vgs | 3.5Ohm @ 220mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 500mW (Ta) |
| Vgs(th) (Max) @ Id | 1.4V @ 26µA |
| Supplier Device Package | PG-SOT323 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 1.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 43 pF @ 25 V |
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