BSS138NL6327HTSA1
MOSFET N-CH 60V 230MA SOT23-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies BSS138NL6327HTSA1 is an N-channel, enhancement mode SIPMOS® MOSFET designed for general-purpose switching applications. This component features a drain-source breakdown voltage (Vdss) of 60V and a continuous drain current (Id) capability of 230mA at 25°C (Ta), with a maximum power dissipation of 360mW (Ta). The on-resistance (Rds On) is specified at a maximum of 3.5 Ohms at 230mA drain current and 10V Vgs.
With a gate charge (Qg) of 1.4 nC maximum at 10V Vgs and input capacitance (Ciss) of 41 pF maximum at 25V Vds, this device is suitable for low-power switching circuits. The BSS138NL6327HTSA1 is housed in a PG-SOT23 surface mount package, also known as TO-236-3 or SC-59, and is supplied on tape and reel. Its operating temperature range is -55°C to 150°C (TJ). This MOSFET finds application in various industrial sectors including consumer electronics, computing, and industrial automation.
Additional Information
Series: SIPMOS®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 230mA (Ta) |
| Rds On (Max) @ Id, Vgs | 3.5Ohm @ 230mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 360mW (Ta) |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA |
| Supplier Device Package | PG-SOT23 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 1.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 41 pF @ 25 V |
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