BSS138N E8004
MOSFET N-CH 60V 230MA SOT23-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' SIPMOS® BSS138N-E8004 is an N-channel MOSFET designed for surface mount applications. This component features a 60V drain-source voltage (Vdss) and a continuous drain current (Id) of 230mA at 25°C. The device offers a maximum on-resistance (Rds On) of 3.5 Ohms at 230mA drain current and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 1.4 nC and input capacitance (Ciss) of 41 pF. Operating across a temperature range of -55°C to 150°C, the BSS138N-E8004 is housed in a PG-SOT23 package. This MOSFET is commonly utilized in consumer electronics and industrial automation applications.
Additional Information
Series: SIPMOS®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 230mA (Ta) |
| Rds On (Max) @ Id, Vgs | 3.5Ohm @ 230mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 360mW (Ta) |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA |
| Supplier Device Package | PG-SOT23 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 1.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 41 pF @ 25 V |
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