BSS131E6327
MOSFET N-CH 240V 110MA SOT23-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies BSS131E6327 is an N-Channel SIPMOS® MOSFET designed for surface mount applications. This component features a Drain-Source Voltage (Vdss) of 240 V and a continuous Drain Current (Id) of 110 mA at 25°C (Ta). The Rds On is specified at a maximum of 14 Ohms when driven at 100 mA with a 10 V gate-source voltage. With a maximum power dissipation of 360 mW (Ta), this MOSFET is suitable for use in power management and switching applications across various industries. Key electrical parameters include a Gate Charge (Qg) of 3.1 nC (Max) at 10 V and an Input Capacitance (Ciss) of 77 pF (Max) at 25 V. The device operates within a temperature range of -55°C to 150°C (TJ) and is supplied in a PG-SOT23 package, presented in Tape & Reel (TR) packaging.
Additional Information
Series: SIPMOS®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 110mA (Ta) |
| Rds On (Max) @ Id, Vgs | 14Ohm @ 100mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 360mW (Ta) |
| Vgs(th) (Max) @ Id | 1.8V @ 56µA |
| Supplier Device Package | PG-SOT23 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 240 V |
| Gate Charge (Qg) (Max) @ Vgs | 3.1 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 77 pF @ 25 V |
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