BSS127H6327XTSA1
MOSFET N-CH 600V 21MA SOT23-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies BSS127H6327XTSA1 is a SIPMOS® series N-Channel MOSFET designed for high-voltage switching applications. This component features a 600V drain-source breakdown voltage (Vdss) and a continuous drain current of 21mA at 25°C. The Rds On is specified at a maximum of 500 Ohms with a gate-source voltage (Vgs) of 10V and a drain current (Id) of 16mA. With a gate charge (Qg) of 1 nC and input capacitance (Ciss) of 28 pF, it offers efficient switching characteristics. The device is packaged in a PG-SOT23 (TO-236-3, SC-59, SOT-23-3) for surface mounting and has a power dissipation of 500mW. Operating temperature range is from -55°C to 150°C. This MOSFET is utilized in various industrial and consumer electronics applications requiring high voltage isolation and switching.
Additional Information
Series: SIPMOS®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21mA (Ta) |
| Rds On (Max) @ Id, Vgs | 500Ohm @ 16mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 500mW (Ta) |
| Vgs(th) (Max) @ Id | 2.6V @ 8µA |
| Supplier Device Package | PG-SOT23 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 1 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 28 pF @ 25 V |
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