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BSS126H6906XTSA1

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BSS126H6906XTSA1

MOSFET N-CH 600V 21MA SOT23-3

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies SIPMOS® BSS126H6906XTSA1 is a high-voltage N-channel depletion mode MOSFET designed for demanding applications. This component features a drain-source voltage (Vds) of 600 V and a continuous drain current (Id) of 21 mA at 25°C (Ta). The Rds On is specified as a maximum of 500 Ohms at 16 mA and 10 V. With a gate charge (Qg) of 2.1 nC (max) at 5 V and input capacitance (Ciss) of 28 pF (max) at 25 V, it offers efficient switching characteristics. The BSS126H6906XTSA1 is housed in a compact PG-SOT23 (TO-236-3, SC-59) surface mount package, suitable for space-constrained designs. Its power dissipation is 500 mW (Ta). Qualified to AEC-Q101 and meeting automotive grade requirements, this MOSFET is utilized in automotive systems, industrial controls, and power management solutions where robust performance and high voltage handling are critical. The device operates within a temperature range of -55°C to 150°C (TJ) and has a maximum gate-source voltage (Vgs) of ±20V.

Additional Information

Series: SIPMOS®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C21mA (Ta)
Rds On (Max) @ Id, Vgs500Ohm @ 16mA, 10V
FET FeatureDepletion Mode
Power Dissipation (Max)500mW (Ta)
Vgs(th) (Max) @ Id2.7V @ 8µA
Supplier Device PackagePG-SOT23
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)0V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)600 V
Gate Charge (Qg) (Max) @ Vgs2.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds28 pF @ 25 V
QualificationAEC-Q101

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