BSS123IXTMA1
100V N-CH SMALL SIGNAL MOSFET INManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies BSS123IXTMA1 is a 100V N-Channel OptiMOS™ small-signal MOSFET in a PG-SOT23-3-5 package. This surface mount device offers a continuous drain current of 190mA (Ta) and a maximum power dissipation of 500mW (Ta). Key electrical characteristics include a drain-to-source voltage of 100V and a maximum Rds(On) of 6 Ohm at 190mA, 10V. The gate charge (Qg) is 0.63 nC max at 10V, and input capacitance (Ciss) is 15 pF max at 50V. The threshold voltage (Vgs(th)) is 1.8V maximum at 13µA, with a maximum gate-source voltage of ±20V. Operating temperature range is -55°C to 150°C (TJ). This component is commonly utilized in industrial, automotive, and consumer electronics applications requiring efficient signal switching. The device is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 190mA (Ta) |
| Rds On (Max) @ Id, Vgs | 6Ohm @ 190mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 500mW (Ta) |
| Vgs(th) (Max) @ Id | 1.8V @ 13µA |
| Supplier Device Package | PG-SOT23-3-5 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 0.63 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 15 pF @ 50 V |
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