BSS119E6327
MOSFET N-CH 100V 170MA SOT23-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies BSS119E6327 is an N-Channel SIPMOS® MOSFET designed for surface mount applications. This component features a Drain-to-Source Voltage (Vdss) of 100V and a continuous drain current (Id) of 170mA at 25°C. The Rds On is specified at a maximum of 6 Ohms when conducting 170mA with a 10V gate-source voltage. With a maximum power dissipation of 360mW (Ta), it maintains a junction temperature range of -55°C to 150°C. Key electrical parameters include a gate charge (Qg) of 2.5 nC (max) at 10V and input capacitance (Ciss) of 78 pF (max) at 25V. It is supplied in a PG-SOT23 package, commonly known as TO-236-3 or SOT-23-3, on tape and reel. This device finds utility in various industrial applications requiring efficient switching and signal control.
Additional Information
Series: SIPMOS®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 170mA (Ta) |
| Rds On (Max) @ Id, Vgs | 6Ohm @ 170mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 360mW (Ta) |
| Vgs(th) (Max) @ Id | 2.3V @ 50µA |
| Supplier Device Package | PG-SOT23 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 2.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 78 pF @ 25 V |
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