BSS119 E7796
MOSFET N-CH 100V 170MA SOT23-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies BSS119-E7796, an N-Channel SIPMOS® MOSFET, offers a 100V drain-source breakdown voltage and a continuous drain current capability of 170mA at 25°C. This device features a low on-resistance of 6 Ohms maximum at 170mA drain current and 10V gate-source voltage. The gate charge (Qg) is specified at 2.5 nC maximum at 10V, and input capacitance (Ciss) is 78 pF maximum at 25V. Designed for surface mounting in the PG-SOT23 package, it operates across a temperature range of -55°C to 150°C. With a maximum power dissipation of 360mW, this component is suitable for applications in industrial and consumer electronics.
Additional Information
Series: SIPMOS®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 170mA (Ta) |
| Rds On (Max) @ Id, Vgs | 6Ohm @ 170mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 360mW (Ta) |
| Vgs(th) (Max) @ Id | 2.3V @ 50µA |
| Supplier Device Package | PG-SOT23 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 2.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 78 pF @ 25 V |
Request a Quote
Clients Also Buy
BSS84PH6327XTSA2
MOSFET P-CH 60V 170MA SOT23-3
BSS138NH6327XTSA2
MOSFET N-CH 60V 230MA SOT23-3
BSS83PH6327XTSA1
MOSFET P-CH 60V 330MA SOT23-3
