BSS119 E6433
MOSFET N-CH 100V 170MA SOT23-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies BSS119-E6433, an N-Channel SIPMOS® MOSFET, offers a 100 V drain-source voltage and a continuous drain current of 170 mA at 25°C. This device features a maximum on-resistance of 6 Ohms at 170 mA drain current and 10 V gate-source voltage, with a typical gate charge of 2.5 nC at 10 V. The input capacitance (Ciss) is specified at a maximum of 78 pF at 25 V. Designed for surface mounting, it is supplied in the PG-SOT23 package. The operating temperature range is -55°C to 150°C. Key applications include power management and general-purpose switching in automotive and industrial sectors.
Additional Information
Series: SIPMOS®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 170mA (Ta) |
| Rds On (Max) @ Id, Vgs | 6Ohm @ 170mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 360mW (Ta) |
| Vgs(th) (Max) @ Id | 2.3V @ 50µA |
| Supplier Device Package | PG-SOT23 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 2.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 78 pF @ 25 V |
Request a Quote
Clients Also Buy
BSS84PH6327XTSA2
MOSFET P-CH 60V 170MA SOT23-3
BSS138NH6327XTSA2
MOSFET N-CH 60V 230MA SOT23-3
BSS83PH6327XTSA1
MOSFET P-CH 60V 330MA SOT23-3
