BSR92PL6327HTSA1
MOSFET P-CH 250V 140MA SC59Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies BSR92PL6327HTSA1 is a P-Channel SIPMOS® MOSFET designed for surface mount applications. This component features a Drain-to-Source Voltage (Vdss) of 250V and a continuous drain current (Id) of 140mA at 25°C. The Rds On is specified at a maximum of 11 Ohms at 140mA, 10V. With a gate charge (Qg) of 4.8 nC at 10V and input capacitance (Ciss) of 109 pF at 25V, this MOSFET is suitable for various power management and switching applications. It operates within a temperature range of -55°C to 150°C. The device is housed in a PG-SC59-3 package, supplied on tape and reel. Applications include automotive and industrial control systems.
Additional Information
Series: SIPMOS®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 140mA (Ta) |
| Rds On (Max) @ Id, Vgs | 11Ohm @ 140mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 500mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 130µA |
| Supplier Device Package | PG-SC59-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.8V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 4.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 109 pF @ 25 V |
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