BSR606NH6327XTSA1
MOSFET N-CH 60V 2.3A SC59Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies BSR606NH6327XTSA1 is an N-Channel OptiMOS™ MOSFET. This device features a 60 V drain-source breakdown voltage and a continuous drain current capability of 2.3 A at 25°C ambient. The BSR606NH6327XTSA1 offers a low on-resistance of 60 mOhm maximum at 2.3 A and 10 V Vgs. Designed for surface mounting in the PG-SC59-3 (TO-236-3) package, it dissipates up to 500 mW at 25°C ambient. Key parameters include a gate charge (Qg) of 5.6 nC maximum at 5 V Vgs and an input capacitance (Ciss) of 657 pF maximum at 25 V Vds. This component is AEC-Q101 qualified and suitable for automotive applications. It operates across a temperature range of -55°C to 150°C.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.3A (Ta) |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 2.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 500mW (Ta) |
| Vgs(th) (Max) @ Id | 2.3V @ 15µA |
| Supplier Device Package | PG-SC59-3 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 5.6 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 657 pF @ 25 V |
| Qualification | AEC-Q101 |
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