BSR316PL6327HTSA1
MOSFET P-CH 100V 360MA SC59Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies BSR316PL6327HTSA1 is a P-Channel SIPMOS® MOSFET designed for surface mount applications. This component features a Drain-to-Source Voltage (Vdss) of 100V and a continuous drain current (Id) of 360mA at 25°C. The device exhibits a maximum On-Resistance (Rds On) of 1.8 Ohm at 360mA and 10V gate drive. Key electrical characteristics include a gate charge (Qg) of 7 nC maximum at 10V and an input capacitance (Ciss) of 165 pF maximum at 25V. With a maximum power dissipation of 500mW (Ta), it operates across a temperature range of -55°C to 150°C. The package type is PG-SC59-3, also known as TO-236-3 or SC-59. This MOSFET is suitable for various industrial and consumer electronics applications.
Additional Information
Series: SIPMOS®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 360mA (Ta) |
| Rds On (Max) @ Id, Vgs | 1.8Ohm @ 360mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 500mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 170µA |
| Supplier Device Package | PG-SC59-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 7 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 165 pF @ 25 V |
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