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BSR315PL6327HTSA1

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BSR315PL6327HTSA1

MOSFET P-CH 60V 620MA SC59

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies BSR315PL6327HTSA1 is a P-Channel SIPMOS® MOSFET designed for efficient switching applications. This component features a Drain-to-Source Voltage (Vdss) of 60V and a continuous drain current (Id) of 620mA at 25°C, with a maximum power dissipation of 500mW (Ta). Its on-resistance (Rds On) is specified at 800mOhm maximum at 620mA and 10V gate-source voltage. The device operates with a gate drive voltage range of 4.5V to 10V, and a maximum gate-source voltage of ±20V. Key parameters include a gate charge (Qg) of 6 nC maximum at 10V and an input capacitance (Ciss) of 176 pF maximum at 25V. The BSR315PL6327HTSA1 is housed in a PG-SC59-3 (TO-236-3, SC-59) surface-mount package, suitable for operation across a wide temperature range of -55°C to 150°C. This MOSFET is typically utilized in power management solutions and general-purpose switching within automotive and industrial sectors.

Additional Information

Series: SIPMOS®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C620mA (Ta)
Rds On (Max) @ Id, Vgs800mOhm @ 620mA, 10V
FET Feature-
Power Dissipation (Max)500mW (Ta)
Vgs(th) (Max) @ Id2V @ 160µA
Supplier Device PackagePG-SC59-3
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds176 pF @ 25 V

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