BSR302NL6327HTSA1
MOSFET N-CH 30V 3.7A SC59Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies presents the BSR302NL6327HTSA1, an N-Channel OptiMOS™ MOSFET. This surface mount component, housed in a PG-SC59-3 (TO-236-3, SC-59) package, features a Drain to Source Voltage (Vdss) of 30 V. It offers a continuous drain current (Id) of 3.7 A at 25°C and a maximum power dissipation of 500 mW under the same conditions. The Rds On is specified at 23 mOhm maximum at 3.7 A and 10 V gate drive. Key parameters include a gate charge (Qg) of 6.6 nC at 5 V and an input capacitance (Ciss) of 750 pF maximum at 15 V. The device operates within a temperature range of -55°C to 150°C. This MOSFET is suitable for applications in industrial automation and consumer electronics.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.7A (Ta) |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 3.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 500mW (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 30µA |
| Supplier Device Package | PG-SC59-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.6 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 750 pF @ 15 V |