BSP92PL6327HTSA1
MOSFET P-CH 250V 260MA SOT223-4Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SIPMOS® P-channel MOSFET, part number BSP92PL6327HTSA1. This surface mount device offers a maximum drain-source voltage of 250V and a continuous drain current of 260mA at 25°C. Featuring a low gate charge of 5.4 nC at 10V and an input capacitance of 104 pF at 25V, this MOSFET is designed for efficient switching. The on-resistance (Rds On) is a maximum of 12 Ohms at 260mA and 10V gate-source voltage. It operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 1.8W. The device is supplied in a PG-SOT223-4-21 package, also known as TO-261-4, and is available on tape and reel. This component is suitable for applications in industrial and consumer electronics.
Additional Information
Series: SIPMOS®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 260mA (Ta) |
| Rds On (Max) @ Id, Vgs | 12Ohm @ 260mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 130µA |
| Supplier Device Package | PG-SOT223-4-21 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 5.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 104 pF @ 25 V |
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