BSP92P E6327
MOSFET P-CH 250V 260MA SOT223-4Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SIPMOS® P-Channel MOSFET, part number BSP92P-E6327. This component offers a 250V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 260mA at 25°C. The device features a maximum power dissipation of 1.8W (Ta) and a maximum on-resistance (Rds On) of 12 Ohm at 260mA and 10V Vgs. Drive voltages range from 2.8V to 10V, with a maximum gate-source voltage (Vgs) of ±20V. The threshold voltage (Vgs(th)) is a maximum of 2V at 130µA. Input capacitance (Ciss) is 104 pF maximum at 25V, and gate charge (Qg) is 5.4 nC maximum at 10V. It is housed in a PG-SOT223-4 (TO-261-4, TO-261AA) package for surface mounting and operates within a temperature range of -55°C to 150°C. This MOSFET is suitable for applications in industrial and automotive sectors. The component is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: SIPMOS®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 260mA (Ta) |
| Rds On (Max) @ Id, Vgs | 12Ohm @ 260mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 130µA |
| Supplier Device Package | PG-SOT223-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.8V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 5.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 104 pF @ 25 V |
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