BSP89L6327HTSA1
MOSFET N-CH 240V 350MA SOT223-4Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies, SIPMOS® series, N-Channel MOSFET, part number BSP89L6327HTSA1. This surface mount device features a 240V drain-source voltage (Vdss) and a continuous drain current (Id) of 350mA at 25°C (Ta). The Rds On is specified at 6 Ohm maximum at 350mA and 10V Vgs. Key parameters include a gate charge (Qg) of 6.4 nC at 10V and an input capacitance (Ciss) of 140 pF at 25V. The device operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 1.8W (Ta). It is supplied in a PG-SOT223-4-21 package, compatible with SOT223-4 requirements, and is available on tape and reel. This component is utilized in applications such as power management and general-purpose switching.
Additional Information
Series: SIPMOS®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 350mA (Ta) |
| Rds On (Max) @ Id, Vgs | 6Ohm @ 350mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta) |
| Vgs(th) (Max) @ Id | 1.8V @ 108µA |
| Supplier Device Package | PG-SOT223-4-21 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 240 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 140 pF @ 25 V |
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