BSP89 E6327
MOSFET N-CH 240V 350MA SOT223-4Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies N-Channel SIPMOS® MOSFET, part number BSP89-E6327, features a 240V drain-source voltage and a continuous drain current of 350mA at 25°C. This surface mount device, packaged in a PG-SOT223-4 (TO-261-4, TO-261AA), offers a maximum power dissipation of 1.8W. Key parameters include a gate charge (Qg) of 6.4 nC at 10V, input capacitance (Ciss) of 140 pF at 25V, and a maximum on-resistance (Rds On) of 6 Ohm at 350mA and 10V. The device operates within a temperature range of -55°C to 150°C and supports gate-source voltages up to ±20V, with a threshold voltage (Vgs(th)) of 1.8V at 108µA. Applications include power management and general-purpose switching in industrial and automotive systems.
Additional Information
Series: SIPMOS®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 350mA (Ta) |
| Rds On (Max) @ Id, Vgs | 6Ohm @ 350mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta) |
| Vgs(th) (Max) @ Id | 1.8V @ 108µA |
| Supplier Device Package | PG-SOT223-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 240 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 140 pF @ 25 V |
Request a Quote
Clients Also Buy
BSS84PH6327XTSA2
MOSFET P-CH 60V 170MA SOT23-3
BSS138NH6327XTSA2
MOSFET N-CH 60V 230MA SOT23-3
BSS83PH6327XTSA1
MOSFET P-CH 60V 330MA SOT23-3
