BSP88L6327HTSA1
MOSFET N-CH 240V 350MA SOT223-4Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SIPMOS® N-Channel MOSFET, part number BSP88L6327HTSA1, is designed for robust performance with a Drain-Source Voltage (Vdss) of 240 V. This surface mount device, packaged in a PG-SOT223-4-21 (TO-261-4), offers a continuous drain current of 350mA at 25°C with a maximum power dissipation of 1.7W. Key electrical characteristics include a maximum Rds On of 6 Ohms at 350mA and 10V, a Gate Charge (Qg) of 6.8 nC at 10V, and an Input Capacitance (Ciss) of 95 pF at 25V. The device operates efficiently with drive voltages between 2.8V and 4.5V. It is suitable for applications in the automotive and industrial sectors, operating across a temperature range of -55°C to 150°C. The MOSFET is supplied in Tape & Reel packaging.
Additional Information
Series: SIPMOS®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 350mA (Ta) |
| Rds On (Max) @ Id, Vgs | 6Ohm @ 350mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.7W (Ta) |
| Vgs(th) (Max) @ Id | 1.4V @ 108µA |
| Supplier Device Package | PG-SOT223-4-21 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.8V, 4.5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 240 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 95 pF @ 25 V |
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