BSP88E6327
MOSFET N-CH 240V 350MA SOT223-4Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies presents the BSP88E6327, an N-Channel SIPMOS® MOSFET designed for surface mount applications. This component features a Drain-to-Source Voltage (Vdss) of 240V and a continuous drain current (Id) of 350mA at 25°C, with a maximum power dissipation of 1.7W (Ta). The device exhibits a maximum on-resistance (Rds On) of 6 Ohm at 350mA and 10V Vgs. Key parameters include a maximum gate charge (Qg) of 6.8 nC at 10V Vgs and a maximum input capacitance (Ciss) of 95 pF at 25V Vds. With a maximum gate-source voltage (Vgs) of ±20V and a threshold voltage (Vgs(th)) of 1.4V at 108µA, this MOSFET is suitable for a range of applications including power supply circuits and general-purpose switching. The device is housed in a PG-SOT223-4 package and supplied on tape & reel.
Additional Information
Series: SIPMOS®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 350mA (Ta) |
| Rds On (Max) @ Id, Vgs | 6Ohm @ 350mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.7W (Ta) |
| Vgs(th) (Max) @ Id | 1.4V @ 108µA |
| Supplier Device Package | PG-SOT223-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.8V, 4.5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 240 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 95 pF @ 25 V |