BSP716NH6327XTSA1
MOSFET N-CH 75V 2.3A SOT223-4Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ N-Channel Power MOSFET, part number BSP716NH6327XTSA1, offers a 75V drain-source voltage capability. This surface mount device, housed in a PG-SOT223-4 package, features a continuous drain current of 2.3A at 25°C with a maximum power dissipation of 1.8W. The Rds On is specified at 160mOhm maximum for a 2.3A drain current and 10V gate-source voltage. Key parameters include a gate charge of 13.1 nC maximum and input capacitance of 315 pF maximum. This component is suitable for applications in industrial and automotive sectors requiring efficient power switching.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.3A (Ta) |
| Rds On (Max) @ Id, Vgs | 160mOhm @ 2.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta) |
| Vgs(th) (Max) @ Id | 1.8V @ 218µA |
| Supplier Device Package | PG-SOT223-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 13.1 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 315 pF @ 25 V |
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