BSP615S2L
MOSFET N-CH 55V 2.8A SOT223-4Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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The Infineon Technologies BSP615S2L is an N-Channel OptiMOS™ MOSFET designed for surface mount applications. This component features a drain-to-source voltage (Vdss) of 55V and a continuous drain current (Id) of 2.8A at 25°C. The Rds On is specified at a maximum of 90mOhm when conducting 1.4A with a Vgs of 10V. It is housed in a PG-SOT223-4 package, also known as TO-261-4, TO-261AA. Key parameters include a gate charge (Qg) of 10nC at 10V and input capacitance (Ciss) of 330pF at 25V. The maximum power dissipation is 1.8W (Ta), and it operates within a temperature range of -55°C to 150°C. This MOSFET is suitable for use in automotive and industrial applications requiring efficient power switching. The device is supplied in Tape & Reel packaging.
Additional Information
Series: Optimos™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.8A (Ta) |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 1.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 12µA |
| Supplier Device Package | PG-SOT223-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 330 pF @ 25 V |
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