BSP613P
MOSFET P-CH 60V 2.9A SOT223-4Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies SIPMOS® P-Channel MOSFET, part number BSP613P. This surface mount device features a 60V drain-to-source voltage and a continuous drain current of 2.9A at 25°C. The Rds On is specified at a maximum of 130mOhm at 2.9A and 10V gate-source voltage. Key parameters include a gate charge of 33 nC at 10V and input capacitance of 875 pF at 25V. The device operates within a temperature range of -55°C to 150°C. Package type is PG-SOT223-4-21 (TO-261-4, TO-261AA). This component is suitable for applications in computing, industrial, and automotive sectors.
Additional Information
Series: SIPMOS®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.9A (Ta) |
| Rds On (Max) @ Id, Vgs | 130mOhm @ 2.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | PG-SOT223-4-21 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 875 pF @ 25 V |
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