BSP603S2LHUMA1
MOSFET N-CH 55V 5.2A SOT223-4Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ BSP603S2LHUMA1 is an N-Channel Power MOSFET designed for demanding applications. This device features a drain-source voltage (Vdss) of 55V and a continuous drain current (Id) capability of 5.2A at 25°C. The low on-resistance (Rds(on)) of 33mOhm is achieved at 2.6A and 10V gate drive, with a maximum Rds(on) specified at 33mOhm @ 2.6A, 10V. The BSP603S2LHUMA1 is housed in a PG-SOT223-4 package, enabling efficient surface mounting. Key parameters include a maximum gate charge (Qg) of 42 nC at 10V and a maximum input capacitance (Ciss) of 1390 pF at 25V. Power dissipation is rated at 1.8W (Ta). This MOSFET is suitable for use in industrial automation, power management, and automotive systems, operating across a temperature range of -55°C to 150°C.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 33mOhm @ 2.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 50µA |
| Supplier Device Package | PG-SOT223-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1390 pF @ 25 V |
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