BSP373L6327HTSA1
MOSFET N-CH 100V 1.7A SOT223-4Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SIPMOS® N-Channel Power MOSFET, part number BSP373L6327HTSA1, offers a 100V drain-source breakdown voltage and a continuous drain current capability of 1.7A at 25°C ambient temperature. This device features a low on-resistance of 300mOhm maximum at 1.7A and 10V gate-source voltage. Designed for surface mounting, it is housed in a PG-SOT223-4 package. Key specifications include a maximum power dissipation of 1.8W (Ta), an input capacitance of 550pF maximum at 25V, and an operating temperature range of -55°C to 150°C. The BSP373L6327HTSA1 is suitable for applications in automotive and industrial power management.
Additional Information
Series: SIPMOS®RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.7A (Ta) |
| Rds On (Max) @ Id, Vgs | 300mOhm @ 1.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | PG-SOT223-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 550 pF @ 25 V |
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