BSP372L6327HTSA1
MOSFET N-CH 100V 1.7A SOT223-4Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies presents the BSP372L6327HTSA1, an N-Channel SIPMOS® series Power MOSFET. This component features a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 1.7A at 25°C (Ta), with a maximum power dissipation of 1.8W (Ta). The Rds On is specified at a maximum of 310mOhm at 1.7A and 5V Vgs. Designed for surface mounting, it utilizes the PG-SOT223-4 package. Key parameters include an input capacitance (Ciss) of 520pF at 25V and a gate threshold voltage (Vgs(th)) of 2V at 1mA. The operating temperature range is -55°C to 150°C (TJ). This device is suitable for applications in automotive and industrial sectors.
Additional Information
Series: SIPMOS®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.7A (Ta) |
| Rds On (Max) @ Id, Vgs | 310mOhm @ 1.7A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | PG-SOT223-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | ±14V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 520 pF @ 25 V |