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BSP324L6327HTSA1

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BSP324L6327HTSA1

MOSFET N-CH 400V 170MA SOT223-4

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies SIPMOS® N-Channel Power MOSFET, part number BSP324L6327HTSA1, is designed for high-voltage applications. This device features a Vds of 400 V and a continuous drain current (Id) of 170mA at 25°C. The Rds(on) is specified at a maximum of 25 Ohms when conducting 170mA with a 10V gate-source voltage. With a gate charge (Qg) of 5.9 nC maximum at 10V and input capacitance (Ciss) of 154 pF maximum at 25V, this MOSFET offers efficient switching characteristics. The BSP324L6327HTSA1 is housed in a PG-SOT223-4-21 (TO-261-4) surface-mount package, suitable for automated assembly processes. Its maximum power dissipation is 1.8W (Ta), and it operates within an extended temperature range of -55°C to 150°C. This component is frequently utilized in power supply units, general-purpose switching, and high-voltage control circuits across various industrial and consumer electronics sectors. The threshold voltage (Vgs(th)) is 2.3V maximum at 94µA, and the maximum gate-source voltage is ±20V.

Additional Information

Series: SIPMOS®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-261-4, TO-261AA
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C170mA (Ta)
Rds On (Max) @ Id, Vgs25Ohm @ 170mA, 10V
FET Feature-
Power Dissipation (Max)1.8W (Ta)
Vgs(th) (Max) @ Id2.3V @ 94µA
Supplier Device PackagePG-SOT223-4-21
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)400 V
Gate Charge (Qg) (Max) @ Vgs5.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds154 pF @ 25 V

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