BSP324 E6327
MOSFET N-CH 400V 170MA SOT223-4Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SIPMOS® N-Channel Power MOSFET, part number BSP324-E6327, offers a 400V drain-source breakdown voltage and a continuous drain current of 170mA at 25°C ambient. This device features a low on-resistance of 25 Ohms maximum at 170mA and 10V Vgs, with a gate charge of 5.9 nC maximum. The input capacitance (Ciss) is 154 pF maximum at 25V. Designed for surface mounting in the PG-SOT223-4 package, it has a maximum power dissipation of 1.8W. The operating temperature range is -55°C to 150°C. This component is suitable for applications in industrial and consumer electronics requiring high voltage switching.
Additional Information
Series: SIPMOS®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 170mA (Ta) |
| Rds On (Max) @ Id, Vgs | 25Ohm @ 170mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta) |
| Vgs(th) (Max) @ Id | 2.3V @ 94µA |
| Supplier Device Package | PG-SOT223-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 5.9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 154 pF @ 25 V |
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