BSP322PL6327HTSA1
MOSFET P-CH 100V 1A SOT223-4Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SIPMOS® P-Channel Power MOSFET, part number BSP322PL6327HTSA1, features a 100V drain-source voltage (Vdss) and a continuous drain current (Id) of 1A at 25°C (Tc). This device offers a maximum on-resistance (Rds On) of 800mOhm at 1A and 10V, with a gate-source threshold voltage (Vgs(th)) of 1V maximum at 380µA. Input capacitance (Ciss) is rated at 372pF maximum at 25V, and gate charge (Qg) is 16.5nC maximum at 10V. The device supports gate-source voltages up to ±20V. It is housed in a PG-SOT223-4-21 (TO-261-4, TO-261AA) surface mount package, delivering 1.8W maximum power dissipation (Ta). Operating temperature range is -55°C to 150°C. This component finds application in industries such as automotive and industrial power control.
Additional Information
Series: SIPMOS®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1A (Tc) |
| Rds On (Max) @ Id, Vgs | 800mOhm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 380µA |
| Supplier Device Package | PG-SOT223-4-21 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 16.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 372 pF @ 25 V |
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