BSP321PL6327HTSA1
MOSFET P-CH 100V 980MA SOT223-4Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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The Infineon Technologies SIPMOS® BSP321PL6327HTSA1 is a P-Channel Power MOSFET designed for demanding applications. This device features a 100V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 980mA at 25°C (Tc). With a maximum on-resistance (Rds On) of 900mOhm at 980mA and 10V gate-source voltage, it offers efficient switching characteristics. The BSP321PL6327HTSA1 supports a gate drive voltage up to 10V and has a maximum gate charge (Qg) of 12 nC at 10V. Packaged in a PG-SOT223-4-21 (TO-261-4, TO-261AA) for surface mounting, it can dissipate up to 1.8W (Ta). Operating across a temperature range of -55°C to 150°C (TJ), this MOSFET is utilized in various industrial, automotive, and consumer electronics sectors.
Additional Information
Series: SIPMOS®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 980mA (Tc) |
| Rds On (Max) @ Id, Vgs | 900mOhm @ 980mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 380µA |
| Supplier Device Package | PG-SOT223-4-21 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 319 pF @ 25 V |
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