BSP321PH6327XTSA1
MOSFET P-CH 100V 980MA SOT223-4Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies presents the BSP321PH6327XTSA1, a P-Channel SIPMOS™ MOSFET designed for robust performance in demanding applications. This surface mount device offers a Drain-to-Source Voltage (Vdss) of 100V and a continuous drain current (Id) of 980mA at 25°C (Tc). Key electrical characteristics include a maximum Rds On of 900mOhm at 980mA and 10V, with a gate charge (Qg) of 12 nC at 10V. The input capacitance (Ciss) is rated at a maximum of 319 pF at 25V. This component is housed in the compact PG-SOT223-4 package, supporting a maximum power dissipation of 1.8W (Ta). Operating across a temperature range of -55°C to 150°C (TJ), the BSP321PH6327XTSA1 is suitable for use in power management, automotive systems, and industrial control.
Additional Information
Series: SIPMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 980mA (Tc) |
| Rds On (Max) @ Id, Vgs | 900mOhm @ 980mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 380µA |
| Supplier Device Package | PG-SOT223-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 319 pF @ 25 V |
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