BSP320SL6433HTMA1
MOSFET N-CH 60V 2.9A SOT223-4Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SIPMOS® BSP320SL6433HTMA1 is an N-Channel Power MOSFET designed for demanding applications. This component features a 60V drain-source voltage (Vdss) and a continuous drain current (Id) of 2.9A at 25°C. The low on-resistance (Rds On) of 120mOhm at 2.9A and 10V gate-source voltage (Vgs) ensures efficient power handling. With a maximum power dissipation of 1.8W (Ta), it is suitable for thermal management in compact designs. The device offers a gate charge (Qg) of 12 nC at 10V and an input capacitance (Ciss) of 340 pF at 25V. Mounted in a PG-SOT223-4 package, this MOSFET operates across a wide temperature range of -55°C to 150°C (TJ). Its robust construction makes it a reliable choice for automotive, industrial automation, and power management systems.
Additional Information
Series: SIPMOS®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.9A (Ta) |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 2.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 20µA |
| Supplier Device Package | PG-SOT223-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 340 pF @ 25 V |
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