BSP320SH6433XTMA1
MOSFET N-CH 60V 2.9A SOT223Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SIPMOS® N-Channel MOSFET, part number BSP320SH6433XTMA1, offers a 60V drain-source breakdown voltage and a continuous drain current of 2.9A at 25°C (Tj). This device features a low on-resistance of 120mOhm maximum at 2.9A and 10V Vgs. The BSP320SH6433XTMA1 is housed in a SOT-223 package, facilitating surface mounting applications. Key electrical characteristics include a gate charge of 9.3 nC maximum at 7V and an input capacitance of 340 pF maximum at 25V. With a maximum power dissipation of 1.8W (Ta) and an operating temperature range of -55°C to 150°C (TJ), this MOSFET is suitable for various industrial and automotive applications.
Additional Information
Series: SIPMOS®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.9A (Tj) |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 2.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 20µA |
| Supplier Device Package | SOT-223 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.3 nC @ 7 V |
| Input Capacitance (Ciss) (Max) @ Vds | 340 pF @ 25 V |
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