BSP320SH6327XTSA1
MOSFET N-CH 60V 2.9A SOT223-4Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SIPMOS™ N-Channel Power MOSFET, part number BSP320SH6327XTSA1, features a 60V drain-source voltage and a continuous drain current of 2.9A (Tj) at 25°C. This surface mount device, housed in a PG-SOT223-4 package (TO-261-4, TO-261AA), offers a maximum on-resistance of 120mOhm at 2.9A and 10V gate-source voltage. With a gate charge of 12nC (max) at 10V and input capacitance of 340pF (max) at 25V, it is suitable for power management applications in automotive and industrial sectors. The device operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 1.8W (Ta).
Additional Information
Series: SIPMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.9A (Tj) |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 2.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 20µA |
| Supplier Device Package | PG-SOT223-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 340 pF @ 25 V |
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