BSP320S E6433
MOSFET N-CH 60V 2.9A SOT223-4Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SIPMOS® N-Channel Power MOSFET, part number BSP320S-E6433, offers 60V drain-to-source voltage and a continuous drain current of 2.9A at 25°C. This surface mount device features a maximum Rds(on) of 120mOhm at 2.9A and 10V Vgs, with a gate charge of 12nC at 10V. The input capacitance (Ciss) is 340pF at 25V. With a power dissipation of 1.8W and an operating temperature range of -55°C to 150°C, this MOSFET is suitable for applications in automotive and industrial sectors. The PG-SOT223-4 package is supplied on tape and reel.
Additional Information
Series: SIPMOS®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.9A (Ta) |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 2.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 20µA |
| Supplier Device Package | PG-SOT223-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 340 pF @ 25 V |