BSP318SL6327HTSA1
MOSFET N-CH 60V 2.6A SOT223-4Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SIPMOS® N-Channel MOSFET, part number BSP318SL6327HTSA1, offers a 60V drain-to-source voltage and a continuous drain current of 2.6A at 25°C (Ta). This surface mount component, packaged in a PG-SOT223-4-21 (TO-261-4, TO-261AA), features a maximum Rds On of 90mOhm at 2.6A and 10V Vgs. Gate charge is rated at a maximum of 20nC at 10V, with input capacitance (Ciss) at 380pF (max) at 25V. The device supports a gate-source voltage range of ±20V and a threshold voltage (Vgs(th)) of 2V at 20µA. Power dissipation is 1.8W (Ta) with an operating temperature range of -55°C to 150°C (TJ). This MOSFET is suitable for applications in automotive and industrial systems. It is supplied in tape and reel packaging.
Additional Information
Series: SIPMOS®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.6A (Ta) |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 2.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 20µA |
| Supplier Device Package | PG-SOT223-4-21 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 380 pF @ 25 V |
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