BSP318SH6327XTSA1
MOSFET N-CH 60V 2.6A SOT223-4Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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The Infineon Technologies SIPMOS® BSP318SH6327XTSA1 is a high-performance N-channel Power MOSFET designed for demanding applications. This component features a 60V drain-source voltage (Vdss) and a continuous drain current (Id) of 2.6A at 25°C (Tj), with a maximum power dissipation of 1.8W (Ta). The Rds On is specified at a maximum of 90mOhm at 2.6A and 10V Vgs. With a gate charge (Qg) of 20 nC at 10V and input capacitance (Ciss) of 380 pF at 25V, this MOSFET offers efficient switching characteristics. The device operates across a temperature range of -55°C to 150°C (TJ) and is available in a PG-SOT223-4 package, suitable for surface mount configurations. Its robust design and specifications make it ideal for use in automotive and industrial power management systems.
Additional Information
Series: SIPMOS®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.6A (Tj) |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 2.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 20µA |
| Supplier Device Package | PG-SOT223-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 380 pF @ 25 V |